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| Light Emitting Diode(InGaAlP) KLB-320 O DIMENSIONS KLB-320 O is a high bright InGaAlP Orange LED, and has the optimized optical characteristics. Unit : [mm] Features * Transparent epoxy lens * High Optical Output Applications * Display * Indicator * Signage * Camera * Mobile Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 30 100 90 -30 ~ +85 -40 ~ +100 260 Unit V mA A mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle Symbol VF IR Iv P d 21/2 Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 8 600 Typ 2.5 10 610 15 10 Max 3.2 50 610 - [ Ta=25 ] Unit V uA cd nm nm nm deg. 1/2 Light Emitting Diode(InGaAlP) KLB-320 O Forward current vs. Ambient temperature 50 Forward current IF[mA] 3.0 Radiant Intensity vs. Forward current 40 30 20 10 Relative intensity 2.0 1.0 0.5 0 0 0 5 10 15 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 Forward current IF[mA] Ambient temperature Ta [] Relative radiant intensity vs. Ambient temperature Relative radiant intensity PO Relative intensity vs. Wavelength 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 500 550 600 650 700 750 Wave Length[nm] 1 0.1 -20 0 20 40 60 80 100 Ambient temperature Ta [] Forward current vs. Forward voltage 80 70 60 50 40 30 20 10 0 0 Intensity [arb.] 10 Radiant Pattern Angle(deg) Forward current IF[mA] +4 +60 0 +2 0 0 -2 0 -4 0 -6 0 50 -80 +80 +100 0 100 -1 00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF[V] 50 50 100 Relative intensity(%) 2/2 |
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